期刊
THIN SOLID FILMS
卷 520, 期 6, 页码 1779-1783出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.08.079
关键词
Copper oxide; Electrodeposition; Bandgap; Semiconductor; Photoluminescence; Hole density; Mobility
类别
资金
- Incorporated Agency New Energy and Industrial Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI)
The (111)-oriented Cu2O films with a 2.0-eV-bandgap energy were prepared by electrodeposition on a (111)-oriented Au/Si wafer substrate at the preparation temperatures from 298 to 323 K, and the structural, optical, and electrical characterizations were carried out by X-ray absorption spectra measurements, X-ray diffraction, scanning electron microscopic observations, optical absorption spectra, photoluminescence spectra measurements, and Hall effect measurements. The photoluminescence spectra and electrical characteristics changed depending on the temperature. The 1.52-eV-visible light that originated from the copper vacancies weakened with a decrease in the preparation temperature, and the emission of the slight 2.0-eV-visible light due to the re-combination of excitons was observed for the Cu2O film prepared at 298 K. The hole density related to the copper vacancies decreased and the mobility increased with a decrease in the preparation temperature, and the maximum mobility of 21 cm(2) V-1 s(-1) could be obtained at 303 K. (c) 2011 Elsevier B.V. All rights reserved.
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