4.4 Article

Solution-based synthesis of cobalt-doped ZnO thin films

期刊

THIN SOLID FILMS
卷 524, 期 -, 页码 137-143

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.10.008

关键词

Zinc Oxide; Transparent Semiconductor; Optical Materials; Deposition from Solutions

资金

  1. Department of Science and Technology in India
  2. British Council in the UK through the UK-India Education and Research Initiative
  3. Engineering and Physical Sciences Research Council [EP/D048850/1] Funding Source: researchfish
  4. EPSRC [EP/D048850/1] Funding Source: UKRI

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Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. (C) 2012 Elsevier B. V. All rights reserved.

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