期刊
THIN SOLID FILMS
卷 524, 期 -, 页码 137-143出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.10.008
关键词
Zinc Oxide; Transparent Semiconductor; Optical Materials; Deposition from Solutions
类别
资金
- Department of Science and Technology in India
- British Council in the UK through the UK-India Education and Research Initiative
- Engineering and Physical Sciences Research Council [EP/D048850/1] Funding Source: researchfish
- EPSRC [EP/D048850/1] Funding Source: UKRI
Undoped and cobalt-doped (1-4 wt.%) ZnO polycrystalline, thin films have been fabricated on quartz substrates using sequential spin-casting and annealing of simple salt solutions. X-ray diffraction (XRD) reveals a wurzite ZnO crystalline structure with high-resolution transmission electron microscopy showing lattice planes of separation 0.26 nm, characteristic of (002) planes. The Co appears to be tetrahedrally co-ordinated in the lattice on the Zn sites (XRD) and has a charge of + 2 in a high-spin electronic state (X-ray photoelectron spectroscopy). Co-doping does not alter the wurzite structure and there is no evidence of the precipitation of cobalt oxide phases within the limits of detection of Raman and XRD analysis. Lattice defects and chemisorbed oxygen are probed using photoluminescence and Raman spectroscopy - crucially, however, this transparent semiconductor material retains a bandgap in the ultraviolet (3.30-3.48 eV) and high transparency (throughout the visible spectral regime) across the doping range. (C) 2012 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据