期刊
THIN SOLID FILMS
卷 520, 期 17, 页码 5640-5643出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2012.04.073
关键词
CuInS2; lift-off process; superstrate-type; thin film solar cell; layer transfer; MoS2
类别
资金
- Nanotechnology Network Project of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- MEXT
Transfer of a CuInS2 thin film grown on a Mo/soda-lime glass substrate was investigated using a lift-off process. The CuInS2 thin film was flatly exfoliated, with preferential peeling occurring in the CuInS2/MoS2 interface vicinity. This suggests that the interfacial MoS2 layer behaves as a sacrificial layer. The lift-off process was also applied to solar cell fabrication. A superstrate-type CuInS2 thin-film solar cell was fabricated and exhibited no significant degradation of conversion efficiency compared with a substrate-type CuInS2 thin-film solar cell. The lift-off process could therefore also be applied to fabricate the upper part of a tandem solar cell structure. (C) 2012 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据