期刊
THIN SOLID FILMS
卷 520, 期 14, 页码 4604-4607出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.10.139
关键词
Molecular beam epitaxy; Pulsed laser deposition; Pb(Zr,Ti)O-3; Ferroelectric oxides; Thin film; Piezo Force Microscopy; Silicon
We report on the epitaxial growth and electrical properties of Pb0.52Zr0.48TiO3 (PZT) thin films deposited by Pulsed Laser Deposition (PLD) on SrTiO3 (STO)-buffered Si(001). Previously to PZT growth, 40 nm-thick (La,Sr)MnO3 (LSMO) layer was deposited to serve as electrical bottom electrode. The 200 nm-thick PZT film epitaxy was optimized by PLD on STO-buffered Si(001). The high contrast of stable artificially poled ferroelectric surfaces evidences the good ferroelectric properties of the PZT thin film. The structural as well as the physical properties of the PZT/LSMO/STO/Si(001) structure prove that very good quality layers have been obtained for films grown on silicon substrate. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据