期刊
THIN SOLID FILMS
卷 520, 期 5, 页码 1454-1459出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.08.046
关键词
Electrochromism; Reactive magnetron sputtering; Tantalum oxide; All-solid-state device
类别
资金
- National Science Council of Taiwan [NSC 97-2221-E-218-005-MY3]
Inorganic-solid-state electrolyte tantalum oxide thin films were deposited by reactive DC magnetron sputtering to improve the leakage and deterioration of traditional liquid electrolytes in electrochromic devices. O-2 at 1-20 sccm flow rates was used to deposit the tantalum oxide films with various compositions and microstructures. The results indicate that the tantalum oxide thin films were amorphous, near-stoichiometric, porous with a loose fibrous structure, and highly transparent. The maximum charge capacity was obtained at an oxygen flow rate of 3 sccm and 50 W. The transmission change of the Ta2O5 film deposited on a WO3/ITO/glass substrate between colored and bleached states at a wavelength of 550 nm was 56.7%. The all-solid-state electrochromic device was fabricated as a multilayer structure of glass/ITO/WO3/Ta2O5/NiOx/ITO/glass. The optical transmittance difference of the device increased with increasing applied voltage. The maximum change was 66.5% at an applied voltage of +/- 5 V. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据