期刊
THIN SOLID FILMS
卷 519, 期 18, 页码 6135-6139出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.03.120
关键词
MgFe2O4 thin film; RF sputtering; Annealing temperature; Humidity sensing
Humidity response of Radio Frequency sputtered MgFe2O4 thin films onto alumina substrate, annealed at 400 degrees C, 600 degrees C and 800 degrees C has been investigated. Crystalline phase formation of thin films annealed at different temperature was analyzed by X-ray Diffraction. A particle/grain like microstructure in the grown thin films was observed by Scanning Electron Microscope and Atomic Force Microscope images. Film thickness for different samples was measured in the range 820-830 nm by stylus profiler. Log R (Omega) response measurement was taken for all thin films for 10-90% relative humidity (% RH) change at 25 degrees C. Resistance of the film increased from 5.9 x 10(10) to 3 x 10(12) at 10% RH with increase in annealing temperature from 400 degrees C to 800 degrees C. A three-order magnitude, 10(12) Omega to 10(9) Omega drop in resistance was observed for the change of 10 to 90% RH for 800 degrees C annealed thin film. A good linear humidity response, negligible humidity hysteresis and minimum response/recovery time of 4 s/6 s have been measured for 800 degrees C annealed thin film. (C) 2011 Elsevier B.V. All rights reserved.
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