期刊
THIN SOLID FILMS
卷 520, 期 5, 页码 1422-1426出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.09.002
关键词
InGaZnO TFTs; Light illumination; Gate-bias induced instability
类别
资金
- National Science Council of the Republic of China [NSC99-2120-M-110-001, NSC 97-2112-M-110-009-MY3]
Mechanism of the instability for indium-gallium-zinc oxide thin film transistors caused by gate-bias stress performed in the dark and light illumination was investigated in this paper. The parallel V-t shift with no degradation of subthreshold swing (S.S) and the fine fitting to the stretched-exponential equation indicate that charge trapping model dominates the degradation behavior under positive gate-bias stress. In addition, the significant gate-bias dependence of V-t shift demonstrates that electron trapping effect easily occurs under large gate-bias since the average effective energy barrier of electron injection decreases with increasing gate bias. Moreover, the noticeable decrease of threshold voltage (V-t) shift under illuminated positive gate-bias stress and the accelerated recovery rate in the light indicate that the charge detrapping mechanism occurs under light illumination. Finally, the apparent negative V-t shift under illuminated negative gate-bias stress was investigated in this paper. The average effectively energy barrier of electron and hole injection were extracted to clarify that the serious V-t degradation behavior comparing with positive gate-bias stress was attributed to the lower energy barrier for hole injection. (C) 2011 Elsevier B.V. All rights reserved.
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