期刊
THIN SOLID FILMS
卷 519, 期 10, 页码 3254-3258出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.022
关键词
Indium oxide; Annealing; Thin film transistors
类别
资金
- Natural Science Foundation of China [10974174, 91021020]
- National Basic Research Program of China [2011CB925603]
- Natural Science Foundation of Zhejiang Province [Y4080171, Z6100117]
Considering practical applications in electronic devices, we studied the growth of In2O3 thin films on amorphous glasses by magnetron sputtering at room temperature and annealing effect on the structural and electrical properties. The vacuum annealed In2O3 thin films display a grain size enlargement and preferential orientation. Electrical characterization shows that the vacuum annealed In2O3 thin films exhibit a significant enhancement of both electron density and mobility, while air ambient annealing leads to a remarkable drop. The mechanism of the electrical characteristic changes in In2O3 thin films by annealing is explored by using different scattering mechanisms. Finally, a thin film transistor device using vacuum annealed In2O3 nanometer thin films as active channel material is demonstrated. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据