期刊
THIN SOLID FILMS
卷 519, 期 21, 页码 7489-7492出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.01.179
关键词
CIGS; Photoconductivity; Photocapacitance; Defect levels
类别
资金
- Polish national funding agency NCBiR
Photoconductivity and photocapacitance of Cu(In,Ga)Se-2 and CuGaSe2 thin films and devices induced by sub-bandgap illumination are investigated. Both effects have been attributed to the optical transition from valence band to the same empty levels situated around 0.8-0.9 eV above the valence band. The influence of the metastable states created by illumination and voltage bias on the sub-bandgap response has been studied. The experimental results are discussed in the framework of a model based on negative-U property of a native defect in chalcopyrites, i.e. V-Se-V-Cu divacancy. The arguments are presented that the levels involved in the optical transition observed in photoconductivity and photocapacitance might be antibonding levels of the acceptor configuration of this defect. (C) 2011 Elsevier B.V. All rights reserved.
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