期刊
THIN SOLID FILMS
卷 519, 期 17, 页码 5726-5729出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.12.200
关键词
Oxides on silicon; Spinels films; CoFe2O4; RHEED
类别
资金
- ICREA Funding Source: Custom
Ferromagnetic films of spinel CoFe2O4 have been grown epitaxially on Si(001) using CeO2/YSZ double buffer layers. The heterostructures were built in a single process by pulsed laser deposition with real-time control by reflection high-energy electron diffraction. YSZ and CeO2 grow cube-on-cube on 51(001) and CoFe2O4 grows with (111) out-of-plane orientation, presenting four in-plane crystal domains. The interface with the buffer layers is smooth and the CoFe2O4 surface is atomically flat, with roughness below 0.3 nm. The films are ferromagnetic with saturation magnetization around 300 emu/cm(3). The properties signal that CoFe2O4 is a good candidate for monolithic devices based on ferromagnetic insulating spinels. (C) 2010 Published by Elsevier B.V.
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