期刊
THIN SOLID FILMS
卷 519, 期 24, 页码 8441-8445出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.05.020
关键词
Dislocation engineering; Light-emitting diodes; Rare earth compounds; Silicon
类别
资金
- European Research Council under the ERC [SILAMPS 226470]
- EPSRC [EP/D032210/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/D032210/1] Funding Source: researchfish
We review progress in silicon LEDs using dislocation engineering to achieve high temperature operation, a process that is fully CMOS (Complementary Metal Oxide Semiconductor) compatible. We concentrate on devices operating in the near infra-red where high value applications are. The need for silicon emitters, lasers and optical amplifiers is discussed followed by an outline of previous approaches and possible future routes explored. Results on gain in silicon are reported and routes to electrically pumped injection lasers and optical amplifiers considered. Extension of 1.1 and 1.5 mu m devices to other wavelengths is discussed. (C) 2011 Elsevier B. V. All rights reserved.
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