期刊
THIN SOLID FILMS
卷 519, 期 20, 页码 6896-6898出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2011.01.408
关键词
Crystalline silicon nanoparticles; Multi-hollow discharge plasma CVD; Micro-crystalline silicon films
We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition. (C) 2011 Elsevier B.V. All rights reserved.
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