期刊
THIN SOLID FILMS
卷 518, 期 22, 页码 6357-6360出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.02.044
关键词
Amorphous oxide semiconductor; Thin film transistors; Amorphous indium-gallium-zinc oxide; Contact resistance; Transmission line method
This paper reports our investigation of different source/drain (S/D) electrode materials in thin-film transistors (TFTs) based on an indium-gallium-zinc oxide (IGZO) semiconductor. Transfer length, contact resistance, channel conductance, and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with intrinsic field-effect mobility (mu(FE-i)) of 10.0 cm(2)/Vs. (c) 2010 Elsevier B.V. All rights reserved.
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