期刊
THIN SOLID FILMS
卷 518, 期 15, 页码 4370-4374出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.01.040
关键词
Chemical spray pyrolysis (CSP); Tin sulfide; Optical properties; Structural properties; X-ray diffraction
类别
资金
- KSCSTE [T.134/SRS/03/CSTE]
- DRDO
SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (>10(5)/cm) were deposited at substrate temperature of 375 degrees C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 degrees C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined. (C) 2010 Elsevier B.V. All rights reserved.
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