期刊
THIN SOLID FILMS
卷 518, 期 17, 页码 4955-4959出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.03.086
关键词
Sputtering; Deposition; Fluorine-doped ZnO; Thin films
类别
资金
- National Science Council of Taiwan, R.O.C. [NSC 96-2221-E-230-021]
Fluorine-doped ZnO transparent conducting thin films were prepared by radio frequency magnetron sputtering at 150 degrees C on glass substrate. Thermal annealing in vacuum was used to improve the optical and electrical properties of the films. X-ray patterns indicated that (002) preferential growth was observed. The grain size of F-doped ZnO thin films calculated from the full-width at half-maximum of the (002) diffraction lines is in the range of 18-24 nm. The average transmittance in visible region is over 90% for all specimens. The specimen annealed at 400 degrees C has the lowest resistivity of 1.86 x 10(-3) Omega cm, the highest mobility of 8.9 cm(2) V(-1) s(-1), the highest carrier concentration of 3.78 x 10(20) cm(-3), and the highest energy band gap of 3.40 eV. The resistivity of F-doped ZnO thin films increases gradually to 4.58 x 10(-3) Omega cm after annealed at 400 degrees C for 4h. The variation of the resistivity is slight. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据