期刊
THIN SOLID FILMS
卷 518, 期 14, 页码 3882-3885出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.10.149
关键词
ZnO:Ga; Annealing; Pulsed direct current magnetron sputtering; Optoelectronic properties; Near-infrared reflective
In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 degrees C for 0.5 h exhibits lowest resistivity of 1.36x10(-4) Omega cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%. (C) 2009 Elsevier B.V. All rights reserved.
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