DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction

Amorphous indium-gallium-zinc-oxide (a-IGZO) films were deposited by dc magnetron sputtering with H2O introduction and how the H2O partial pressure (P-H2O) during the deposition affects the electrical properties of the films was investigated in detail Resistivity of the a-IGZO films increased dramatically to over 2 x 10(5) Omega cm with increasing P-H2O to 2.7 x 10(-2) Pa while the hydrogen concentration in the films increased to 2 0 x 10(21) cm(-3) TFTs using a-IGZO channels deposited under P-H2O at 1 6-8.6 x 10(-2) Pa exhibited a field-effect mobility of 1.4-3 0 cm(2)/Vs. subthreshold swing of 1 0-1.6 V/decade and on-off current ratio of 3 9 x 10(7)-1.0 x 10(8). (C) 2009 Elsevier B V All rights reserved