4.4 Article

Influence of vanadium concentration on the microstructure and magnetic properties of V-doped ZnO thin films

期刊

THIN SOLID FILMS
卷 518, 期 19, 页码 5505-5508

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2010.04.034

关键词

ZnO; Vanadium doping; Thin films; PLD; DMS

资金

  1. Bulgarian Academy of Sciences
  2. CNRS, France
  3. Department of Electronics and Electrical Engineering Keio University, Japan
  4. Ministry of Education and Science of Bulgaria [F1512/05]
  5. EU [025646]

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Vanadium doped ZnO thin films (Zn(1-x)V(x)O, where x=0.05 or x=0.13) were grown on c-cut sapphire substrates using pulsed laser deposition technique. Their structure and magnetic properties were examined in relation to the doping concentration. All deposited films were highly oriented along the c-axis and exhibited ferromagnetic behavior with a Curie temperature up to 300 K. The crystal structure was found to be better for layers with lower vanadium concentration. The films had a porous fine-grained microstructure and a column-like character as the V concentration was reduced. A weak dependence of magnetization on temperature was observed. The saturation magnetization was found to be strongly dependent on the crystal structure, grain size and V-ion concentration. (C) 2010 Elsevier B.V. All rights reserved.

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