期刊
THIN SOLID FILMS
卷 518, 期 16, 页码 4556-4559出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.12.030
关键词
Zinc oxide; Atomic layer deposition; Epitaxy; Monocrystalline; Diethylzinc
In the present work we report on the monocrystalline growth of (00.1) ZnO films on GaN template by the Atomic Layer Deposition technique. The ZnO films were obtained at temperature of 300 degrees C using dietylzinc (DEZn) as a zinc precursor and deionized water as an oxygen precursor. High resolution X-ray diffraction analysis proves that ZnO layers are monocrystalline with rocking curve FWHM of the 00.2 peak equals to 0.07 degrees. Low temperature photoluminescence shows a sharp and bright excitonic line with FWHM of 13 meV. (C) 2009 Elsevier B.V. All rights reserved.
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