期刊
THIN SOLID FILMS
卷 518, 期 12, 页码 3373-3381出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.10.119
关键词
Indium tin oxide; Nanoparticles; Dispersion; Stability; Transmittance; Conductance; Charge transport
类别
资金
- Deutsche Forschungsgemeinschaft [1161/1]
- Evonik Industries AG
The structure formation and charge transfer of thin nanoparticulate indium tin oxide (ITO) films prepared by dip-coating was studied as a function of stabilizer before and after annealing at different temperatures. The analysis of the film structure by optical methods revealed that it is a function of the stability. Suspensions containing an optimum stabilizer concentration of 0.1 mol/l resulted in densely packed films with a peak specific conductivity of 8.3 S cm(-1) after annealing at 550 degrees C for 1 h in air and 121 S cm(-1) annealing in forming gas at 250 degrees C for 1 h, respectively. Furthermore, for the densely packed films fluctuation-induced tunnelling was found to be the dominant charge transport mechanism, whereas for the low density films a thermally activated charge transport was observed. That the films of maximum density showed a metallic charge transport behaviour at temperatures above 300 K indicated the optimal contact between ITO particles had been achieved. (C) 2009 Elsevier B.V. All rights reserved.
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