期刊
THIN SOLID FILMS
卷 517, 期 7, 页码 2360-2364出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.11.050
关键词
Solar cell; Device model; Luminescence; Grain boundary; Copper indium gallium diselenide; Lifetime
Time-resolved photoluminescence (TRPL) measurements indicate that bare Cu(In,Ga)Se-2 (CIGS) films degrade when they are exposed to air or stored in nitrogen-purged dry boxes. The degradation significantly affects device performance and electro-optical measurements. Measuring films prior to degradation reveals long lifetimes and distinct recombination properties. For high-quality material. the surface recombination velocity at grain boundaries, bare CIGS surfaces, and CIGS/CdS interfaces is less than 10(3) cm/s, and lifetime values are often greater than 50 ns. In high injection, CIGS has recombination properties similar to GaAs. On completed devices, charge-separation dynamics can be characterized. (C) 2008 Elsevier B.V. All rights reserved.
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