期刊
THIN SOLID FILMS
卷 517, 期 24, 页码 6516-6519出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.04.017
关键词
Chalcogenides; Residual stress; Phase-change memory; Germanium selenide (Ge2Se3); Tin telluride (SnTe); X-ray diffraction
类别
资金
- National Science Foundation [ECS-0521341]
Chalcogenide thin film stacks of polycrystalline SnTe and amorphous Ge2Se3 are analyzed for residual stress using X-ray diffraction. The as-deposited film stacks are annealed at different temperatures and the thermal dependence of stress is investigated. Stress evaluations are performed by employing the sin(2) psi technique using a 2D area detector system. As-deposited samples are found to be compressively stressed and exhibit increasingly tensile thermal stress with increasing annealing temperature. Onset of crystallization of the bottom Ge2Se3 layer is indicated by a sharp drop in the stress level in the 270 degrees C-360 degrees C temperature range, due to volume shrinkage associated with the crystallization. Diffraction patterns of samples annealed at different temperatures indicate compositional changes that are attributed to inter-diffusion of ions between the two layers. The XRD profiles of samples annealed at 360 degrees C and 450 degrees C indicate the formation of a Ge2Se3-SnTe solid solution. It is suggested that both, residual stress and temperature dependent compositional changes affect the measured d spacings. (C) 2009 Elsevier B.V. All rights reserved.
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