期刊
THIN SOLID FILMS
卷 517, 期 23, 页码 6320-6322出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2009.02.059
关键词
Indium oxide; Atomic layer deposition; Thin film; Transparent conducting oxide
Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In (acac)(3) (acac = acetylacetonate, pentane-2,4-dione) and either H2O or O-3 as precursors. Successful growth using In(acac)(3) is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 degrees C for In(acac)(3) and H2O, 165-225 degrees C for In(acac)(3) and O-3. The growth rates obtained are of the order 20 pm/cycle for In(acac)(3) and H2O, 12 pm/cycle for In(acac)(3). Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
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