期刊
THIN SOLID FILMS
卷 517, 期 7, 页码 2423-2426出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.11.017
关键词
Cu(In,Ga)Se-2; In2S3, Buffer layers; Traps levels; Admittance spectroscopy
Co-evaporated Cu(In,Ga)Se-2 (CIGSe) based solar cells with Physical Vapour Deposited (PVD) Indium Sulphide (In2S3) as buffer layer have been studied by admittance spectroscopy and current-voltage characteristics measurements. The results have been compared to those obtained with a reference CBD-CdS/CIGSe device. In darkness, the OVD-In2S3 buffer layer devices exhibit higher densities of trapping defects and low values of shunt resistance. However, under illumination we have observed an important improvement of the In2S3/CIGSe electronic transport properties. This behavior seems to be linked to the presence of a metastable defect with activation energy of 0.3 eV. (C) 2008 Elsevier B.V. All rights reserved.
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