期刊
THIN SOLID FILMS
卷 517, 期 11, 页码 3222-3226出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.10.114
关键词
Crystallization; Silicon; Thin film stress; Stress-induced crystallization; X-ray diffraction; Raman spectroscopy
类别
资金
- NSF [0729250]
- NSF Division of Chemical, Bioengineering, Environmental, and Transport Systems
- U.S. Department of Energy [DE-FG02-01ER45885]
- U.S. Department of Energy (DOE) [DE-FG02-01ER45885] Funding Source: U.S. Department of Energy (DOE)
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0729250] Funding Source: National Science Foundation
Hydrogenated amorphous silicon films were grown on to thermally oxidized silicon wafers by Radio Frequency magnetron sputtering, and SiNx and Al2O3 capping layers were used to control the residual thermal stress. After annealing, a comparison of the silicon films with and without capping layers indicates that tensile stress induced by the capping layer enhances the crystallinity of the annealed amorphous silicon film. The stress is due to the mismatch between the coefficients of thermal expansion for the capping layer and amorphous silicon film. These results highlight the potential of thermal stress as a means to alter the crystallization in thin film architectures and suggest that even larger effects can be obtained with suitable choices of capping layer chemistry. (C) 2008 Elsevier B.V. All rights reserved.
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