Growth of Cu2ZnSnS4 thin films on Si (100) substrates by multisource evaporation

Cu2ZnSnS4 films were grown on Si (100) by vacuum evaporation using elemental Cu, Sn, S and binary ZnS as sources. X-ray diffraction patterns of films grown at different substrate temperatures indicated that polycrystalline growth was suppressed and the orientational growths were relatively induced in a film grown at higher temperatures. Tetragonal structure Of Cu2ZnSnS4 films was confirmed by studying RHEED patterns. The existence of c-axis ([001] direction) growth, two kinds of a-axis (< 000 > direction) growth and four kinds of {112} twins which can be classified as two symmetrical pairs is proposed. Broad emissions at around 1.45 eV and 1.31 eV were observed in the photoluminescence spectrum measured at 13 K. (c) 2008 Elsevier B.V. All rights reserved.