期刊
THIN SOLID FILMS
卷 517, 期 1, 页码 453-455出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.119
关键词
Spectroscopic ellipsometry; High dielectric constant; Hafnium silicate; Density; Chemical oxide
类别
资金
- EPSRC (UK)
The optical dielectric function of hafnium oxide and hafnium silicate thin films was extracted from spectroscopic ellipsometry measurements. The dielectric function is further used for extracting the film density and also to investigate the relation with composition, deposition method and layer stoichiometry. The density of a hafnium silicate film was found to vary between 5563 and 8223 kg/m(-3), for hafnium content (x) between 0.3 and 0.7. We demonstrate that the density of pure hafnium oxide film depends on the deposition method employed and the chemical nature of the starting surface. Also, we investigate the zero frequency contribution to the dielectric constant as a function of hafnium silicate film composition. (C) 2008 Elsevier B.V. All rights reserved
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