期刊
THIN SOLID FILMS
卷 517, 期 3, 页码 1177-1181出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.06.006
关键词
VN/MgO interface; Misfit dislocations; Adhesion energy
类别
资金
- European Commission [026001 9a]
- Austrian Science Fund
Vanadium nitride VN was grown epitaxially on (111) MgO by reactive magnetron sputtering. The substrate preparation and deposition conditions cause an interface roughness of 2-3 nm. The lattice mismatch of cube-on-cube orientation relationship between (111) VN and (111) MgO is relaxed by misfit dislocations. Ab-initio simulations were employed to Calculate the lowest energy configuration of the coherent parts of the interface. This is accomplished by an O termination of the MgO and V termination of VN at the interface. (C) 2008 Elsevier B.V. All rights reserved.
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