期刊
THIN SOLID FILMS
卷 516, 期 21, 页码 7345-7349出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.02.011
关键词
Ru; atomic layer deposition; RuCp2; oxygen exposure
类别
资金
- System IC 2010 program
- BK21 Program of the Ministry of Education and Human Resources Development
- POSTECH core research program
- Korea Electronics Technology Institute [10023796]
- Korean Government (MOEHRD) [KPF-2006-005-J13102]
- Korea government (MOST) [R01-2007-000-20143-0, 2007-02864]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030519] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Korea Institute of Industrial Technology(KITECH) [10023796] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-02864, R01-2007-000-20143-0, 2007-331-D00243, 과C6A2006] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The effect of the oxygen exposure on ruthenium atomic layer deposition (ALD) was investigated. Ru ALD was carried out using bis (cyclopentadienyl)ruthenium and oxygen gas. To investigate the effect of the oxygen exposure, the total oxygen exposure was changed by two different ways; change of exposure time at a constant flow and change of flow at a constant exposure time. While the increase in oxygen exposure time did not change the film properties, the increase in the oxygen flow rate resulted in a significant increase in the growth rate and resistivity. The properties of ALD Ru films prepared at different oxygen exposure conditions were analyzed by various techniques including synchrotron radiation X-ray diffraction, X-ray photoelectron spectroscopy, X-ray reflectivity, and transmission electron microscopy. The growth mechanism is discussed based on the analysis results. (c) 2008 Elsevier B.V. All rights reserved.
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