期刊
THIN SOLID FILMS
卷 516, 期 12, 页码 3940-3947出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.07.204
关键词
aluminum induced crystallization; XTEM; polyimide
Polysilicon (poly-Si) films fabricated on flexible substrates are of considerable interest because of their potential application in flexible displays. In this study, an 800 nm layer of amorphous silicon (a-Si), followed by a 20 ran layer of aluminum (Al), were deposited on polyimide/silicon and silicon dioxide/silicon (SiO2/Si) substrates. Samples on polyimide were rapid thermal annealed at 900 degrees C for 20 s, while those on SiO2/Si were vacuum annealed at temperatures between 200 and 600 degrees C for 1 h. Film properties were analyzed using Rutherford backscattering spectrometry, cross-section transmission electron microscopy, and X-ray diffraction. Silicon films containing nanocrystallites and pores were obtained, with a pore formation activation energy (EA) of 0.59 eV. A short-range self-diffusion model is proposed for the formation of Si crystallites in cases where the solid-solubility limit for Si dissolution into Al has not been reached. (c) 2007 Published by Elsevier B.V.
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