期刊
THIN SOLID FILMS
卷 517, 期 1, 页码 80-83出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2008.08.097
关键词
Silicon; MOSFET; Contact; Metal gate; Silicide; Germanide; Interface; Work function
类别
资金
- Ministry of Education, Culture, Sports, Science, and Technology in Japan [18063012]
We report silicide and germanide technology for ohmic contacts and metal gates of MOSFETs in this paper. We have investigated the control technology of NiSi/Si contact properties by incorporating third elements such as Ge and C for future ULSI applications. The work function and resistivity of various Ni and Pt germanides have been also examined as metal gate materials. The low resistivity and tunable work function of these silicides and germanides are desirable for future CMOS devices. (c) 2008 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据