3.9 Article

CVD SYNTHESIS OF GRAPHENE FROM ACETYLENE CATALYZED BY A REDUCED CuO THIN FILM DEPOSITED ON SiO2 SUBSTRATES

期刊

JOURNAL OF THE CHILEAN CHEMICAL SOCIETY
卷 60, 期 2, 页码 2911-2913

出版社

SOC CHILENA QUIMICA
DOI: 10.4067/S0717-97072015000200010

关键词

Graphene; Cupric Oxide; CVD

资金

  1. CONICYT [FONDECYT 11110522]
  2. Air Force Office of Scientific Research (USA) [FA9550-13-1-006]
  3. ANILLO [ACT 1204]

向作者/读者索取更多资源

Few-layer graphene was grown by Chemical Vapor Deposition on a CuO thin film pre-deposited by sputtering on SiO2/Si substrates using acetylene as the carbon source. After evaporation of metal, graphene lies directly in contact with the SiO2 dielectric layer. Raman spectroscopy was used to confirm the presence of a single and/or few-layers of graphene. This procedure does not requiring any post processing to transfer the thin film onto a dielectric substrate or the use of ultra-high vacuum during synthesis.

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