期刊
SYNTHETIC METALS
卷 162, 期 3-4, 页码 406-409出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2011.12.029
关键词
Polymer; Photoresponse; ZnO; Si; Conductivity; Defect
资金
- National Science Council of Taiwan [100-2815-C-018-004-E, 100-2112-M-018-003-MY3]
In this study, the effect of the incorporation of ZnO nanoparticles into poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) on the photovoltaic property and photoresponse in the n-type Si/PEDOT:PSS device was examined. The enhanced responsivity by ZnO doping can be interpreted by the external light injection and the device rectifying performance. The improved photocurrent stability by incorporation of ZnO nanoparticles into PEDOT:PSS can be explained by the reduced charge-trap density in the ZnO-doped PEDOT:PSS film. (C) 2012 Elsevier B.V. All rights reserved.
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