4.5 Article

Protonic defect induced carrier doping in TTFCOO-NH4+: Tunable doping level by solvent

期刊

SYNTHETIC METALS
卷 162, 期 5-6, 页码 531-535

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2012.01.026

关键词

Protonic defect; Carrier doping; XPS; Salt bridge; Charge transport

资金

  1. Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
  2. Izumi science foundation

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The origin of carrier doping in TTFCOO-NH4+ has been verified to include protonic defect in salt bridge by means of X-ray photoelectron spectroscopy (XPS), for the first time. The emergence of spin in TTFCOO-NH4+ is tunable over quite a wide range (9-33%) only by selecting a suitable solvent for the salt crystallization. The spin concentration of the solvent-dependent salts weakly correlates with intensity of optical absorption in near-infrared region, values of g-tensor and dc conductivity at rt. The solvents determining doping level of the salt are classified into three categories by self-dissociation ability (pK(SH)) of solvent, which likely controls inclusion of protonic defect in the salts. (C) 2012 Elsevier B.V. All rights reserved.

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