4.5 Article

High mobility, low voltage operating C60 based n-type organic field effect transistors

期刊

SYNTHETIC METALS
卷 161, 期 19-20, 页码 2058-2062

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2011.06.042

关键词

OFET; C-60; High mobility; Dielectric; Low voltage

资金

  1. Austrian Science Foundation [NFN-S09706-N08, NFN-S09711-N08, NFN-S09712-N08, P20772-N20]
  2. Austrian Science Fund (FWF) [P20772] Funding Source: Austrian Science Fund (FWF)

向作者/读者索取更多资源

We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic-organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500 mV, while exhibiting field effect mobilities exceeding 3 cm(2) V-1 s(-1). (C) 2011 Elsevier B.V. All rights reserved.

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