期刊
SYNTHETIC METALS
卷 161, 期 19-20, 页码 2058-2062出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2011.06.042
关键词
OFET; C-60; High mobility; Dielectric; Low voltage
资金
- Austrian Science Foundation [NFN-S09706-N08, NFN-S09711-N08, NFN-S09712-N08, P20772-N20]
- Austrian Science Fund (FWF) [P20772] Funding Source: Austrian Science Fund (FWF)
We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude). The assembly of metal-oxide and organic passivation layer combines the properties of the high dielectric constant of the metal oxide and the good organic-organic interface between semiconductor and insulator provided by a thin capping layer on top of the AlOx film. This results in OFETs that operate with voltages lower than 500 mV, while exhibiting field effect mobilities exceeding 3 cm(2) V-1 s(-1). (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据