期刊
SYNTHETIC METALS
卷 161, 期 17-18, 页码 2011-2016出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2011.07.016
关键词
DNA; Organic material; Photoresponse; Schottky diode; Ideality factor
资金
- Global Research Network for Electronic Devices & Biosensors (GRNEDB)
- KING Saud University
The junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 +/- 0.1 and 0.56 +/- 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor. (C) 2011 Elsevier B.V. All rights reserved.
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