期刊
SYNTHETIC METALS
卷 161, 期 17-18, 页码 1987-1990出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2011.07.008
关键词
Organic field effect transistors; Charge carrier mobility; Meyer-Neldel rule; Charge transport; Film morphology; Grain size
资金
- Ministry of Education and Science of Ukraine [M/125-2009]
- Austrian Science Foundation [S9706, S9711]
- Science &Technology Center in Ukraine [5258]
- OAD Project [UA-10/2009]
Meyer-Neldel rule for charge carrier mobility measured in C-60-based organic field-effect transistors (OFETs) at different applied source drain voltages and at different morphologies of semiconducting fullerene films was systematically studied. A decrease in the Meyer-Neldel energy E-MN from 36 meV to 32 meV was observed with changing electric field in the channel. Concomitantly a decrease from 34 meV to 21 meV was observed too by increasing the grain size and the crystallinity of the active C-60 layer in the device. These empiric findings are in agreement with the hopping-transport model for the temperature dependent charge carrier mobility in organic semiconductors with a Gaussian density of states (DOS). Experimental results along with theoretical descriptions are presented. (C) 2011 Elsevier B.V. All rights reserved.
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