期刊
SYNTHETIC METALS
卷 160, 期 15-16, 页码 1787-1792出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2010.06.024
关键词
Octithiophene TFTs; Charge carrier mobility; Output characteristic
资金
- Tunisian Ministry of High Education
Thin-film organic field-effect transistor was made with vapor-deposited polycrystalline octithiophene on silicon oxide insulator layers. In conventional field-effect transistors, the extracted mobility does not take into account the distribution of charge carriers. However, in disordered organic field-effect transistors, the local charge carrier mobility decreases from the semiconductors/insulator interface in to the bulk, due to its dependence on the charge carrier density. It is demonstrated that the conventional field-effect mobility is a good approximation for the local mobility of the charge carriers at the interface. In this paper we present a new approach to the mobility in organic thin-film transistor (OTFTs), and with a new procedure we extract the electrical parameters of organic TFTs that possible to reproduce very well the device characteristic and mobility. (C) 2010 Elsevier B.V. All rights reserved.
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