Effect of Au deposition rate on the performance of top-contact pentacene organic field-effect transistors

A study of the influence of the deposition rate of top-contact Au source and drain electrodes deposited by electron-beam evaporation on the electrical performance of pentacene organic field-effect transistors (OFETs) is presented. By adjusting the deposition rate of the Au electrodes to minimize metal diffusion into the semiconductor pentacene layer, the source/drain contact resistance could be reduced. At a Au deposition rate of 10 angstrom/s, high-performance pentacene-p-channel OFETs were obtained with a field-effect mobility of 0.9 cm(2)/Vs and a normalized channel width resistance of 23 k Omega cm in a device with a channel length of 25 mu m. (C) 2009 Elsevier B.V. All rights reserved.