期刊
SYNTHETIC METALS
卷 159, 期 21-22, 页码 2368-2370出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.synthmet.2009.08.019
关键词
OFET; Organic field-effect transistor; Low-voltage; Fullerene; P3HT; Self-assembled monolayer dielectric; Phosphonic acid; Organic complementary logic; Inverter
资金
- Engineering and Physical Sciences Research Council (EPSRC)
- Research Councils UK (RCUK)
- Engineering and Physical Sciences Research Council [EP/E06454X/1, EP/C539524/1] Funding Source: researchfish
- EPSRC [EP/C539524/1, EP/E06454X/1] Funding Source: UKRI
The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.
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