Triple-period partial misfit dislocations at the InN/GaN (0001) interface: A new dislocation core structure for III-N materials

The lattice-misfit InN/GaN (0001) interface supports a triangular network of alpha-core 90 degrees partial misfit dislocations. These misfit dislocations provide excellent strain relief. However, in their unreconstructed form the dislocation contains numerous high-energy N dangling bonds, which must be eliminated by reconstructing the dislocation core. Existing single-period (SP) and double-period (DP) dislocation reconstruction models eliminate these dangling bonds via a like-atom dimerization, such as N-N dimers. However, we show that these N-N dimers are unstable for the III-N materials, so an entirely new reconstruction mechanism is needed. A triple-period (TP) structural model is developed which eliminates N dangling bonds via the formation of N vacancies instead of N-N dimers. The model contains no N-N (or III-III) bonds, fully bonds all N atoms to four group-Ill neighboring atoms, and satisfies the electron counting rule by transferring charge from In dangling bonds to Ga dangling bonds. (c) 2012 Elsevier B.V. All rights reserved.