期刊
SURFACE SCIENCE
卷 606, 期 3-4, 页码 564-570出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2011.11.031
关键词
Photoelectron spectroscopy; Near-edge X-ray absorption fine structure; h-BN monolayer; Graphene; Oxidation
资金
- Swedish Research Council
- Russian Foundation of Basic Research [09-02-01278]
The effect of atomic oxygen adsorption on the structure and electronic properties of monolayer hexagonal boron nitride (h-BN) grown on Ir(111) has been studied using near edge X-ray absorption fine structure spectroscopy (NEXAFS), photoelectron spectroscopy (PES), and low-energy electron diffraction (LEED). It has been shown that the oxidation of the h-BN monolayer occurs through a gradual substitution of N by O in the h-BN lattice. This process leads to the formation of defect sites corresponding to three different types of the B atom environment (BN3-xOx with x=1,2,3). The oxidation of the h-BN monolayer is very different from the case of graphene on Ir(111), where adsorption of atomic oxygen results mainly in the formation of epoxy groups [J. Phys. Chem. C. 115, 9568 (2011)]. A post-annealing of the h-BN monolayer after oxygen exposure results in further destruction of the B N bonds and formation of a B2O3-like structure. (C) 2011 Elsevier B.V. All rights reserved.
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