期刊
SURFACE SCIENCE
卷 605, 期 13-14, 页码 1308-1312出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2011.04.024
关键词
9,10-phenanthrenequinone; Silicon-organic; Heterojunction; Passivation
资金
- National Science Foundation [DMR-1005892]
- Princeton MRSEC [DMR-0819860]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [819860] Funding Source: National Science Foundation
- Division Of Chemistry
- Direct For Mathematical & Physical Scien [0924104] Funding Source: National Science Foundation
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1005892] Funding Source: National Science Foundation
In this work we demonstrate that the room-temperature deposition of the organic molecule 9,10-phenanthrenequinone (PQ) reduces the surface defect density of the silicon (100) surface by chemically bonding to the surface dangling bonds. Using various spectroscopic measurements we have investigated the electronic structure and band alignment properties of the PQ/Si interface. The band-bending at the PQ-passivated silicon surface is negligible for both n- and p-type substrates, demonstrating a low density of surface defects. Finally we show that PQ forms a semiconducting wide-bandgap type-I heterojunction with silicon. (C) 2011 Elsevier B.V. All rights reserved.
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