期刊
SURFACE SCIENCE
卷 603, 期 15, 页码 L87-L90出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2009.05.005
关键词
Graphene; Silicon carbide; Carbon; Low-energy electron microscopy (LEEM); Low-energy electron diffraction (LEED); Scanning tunneling microscopy (STM)
资金
- Swedish National Energy Administration
The influence of substrate orientation on the morphology of graphene growth on 6H-SiC(0 0 0 1) was investigated using low-energy electron and scanning tunneling microscopy (LEEM and STM). Large area monolayer graphene was successfully furnace-grown on these substrates. Larger terrace widths and smaller step heights were obtained on substrates with a smaller mis-orientation from on-axis (0.03 degrees) than on those with a larger (0.25 degrees). Two different types of a carbon atom networks, honeycomb and three-for-six arrangement, were atomically resolved in the graphene monolayer. These findings are of relevance for various potential applications based on graphene-SiC structures. (C) 2009 Elsevier B.V. All rights reserved.
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