期刊
SURFACE AND INTERFACE ANALYSIS
卷 43, 期 1-2, 页码 522-524出版社
WILEY-BLACKWELL
DOI: 10.1002/sia.3459
关键词
SIMS; sputtering; depth profile; shallow implantation; HR-RBS
This paper presents an investigation on SIMS profile quantification for ultra-shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs+ and O-2(+) primary beams, respectively. Results for as-implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR-RBS and ERDA profiles. Copyright (C) 2010 John Wiley & Sons, Ltd.
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