Advanced SIMS quantification in the first few nm of B, P and As ultrashallow implants

This paper presents an investigation on SIMS profile quantification for ultra-shallow profiles. New configuration for the Cesium and Oxygen sources on the CAMECA IMS Wf tool provides SIMS profiling capability at 150 eV impact energy with a sputter rate of 1 and 2 nm/min for the Cs+ and O-2(+) primary beams, respectively. Results for as-implanted B, P and As profiles using extremely low impact energy (EXLIE) sputtering conditions are compared with HR-RBS and ERDA profiles. Copyright (C) 2010 John Wiley & Sons, Ltd.