Optimization and comparison of depth profiling in GaAs and GaSb with TOF-SIMS

Depth profile analysis of GaAs/AlGaAs and GaSb/AlGaSb heterostructures was performed by SIMS and optimized with respect to the depth resolution. Different sputter ions like caesium, oxygen and argon were used with various sputter angles and ion energies. SEM images were taken from the sputter craters in order to determine the surface roughness which is correlated to the depth resolution. The best results for both material systems were achieved by using argon ions with 0.5 keV at an angle of 55 degrees towards the sample normal. Copyright (C) 2010 John Wiley & Sons, Ltd.