期刊
SURFACE AND INTERFACE ANALYSIS
卷 43, 期 1-2, 页码 137-140出版社
WILEY-BLACKWELL
DOI: 10.1002/sia.3657
关键词
SIMS; matrix effects; ion yield; quantification; silicon; oxygen
资金
- French ANR
Specific samples containing O-18 and O-16 are used to measure the variations of the relative ion yields of boron, oxygen and silicon as a function of oxygen concentration. O-18 and O-16 are used to implement an Isotopic Comparative Method (ICM) which allows to correct the matrix effects involved by the presence of a high concentration of oxygen in the sample: the near-flat profile of O-18, measured in the 'dilute', linear regime (weak concentration) is used to calculate the real concentration of O-16. The ion yields of B+, O+, Si+, O- and Si- are measured as a function of the oxygen concentration. For B+ ion yield, the variation is important whereas they are weak for Si-+/- and O-+/- ion yields for the range [0-12 at.%]. This ICM applied to oxygen in silicon can be considered as an interesting complementary method of previous 'O-16 implantation method' and of 'O-18 single marker method'. Copyright (C) 2010 John Wiley & Sons, Ltd.
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