期刊
SURFACE & COATINGS TECHNOLOGY
卷 234, 期 -, 页码 42-47出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2013.05.045
关键词
Atmospheric-pressure plasmas; Dielectric barrier discharges; Functional coatings; Organosilicon plasmas; Wood
资金
- National Science and Engineering Research Council (NSERC)
- Fonds de Recherche du Quebec - Nature et Technologies (FRQNT)
- Association Nationale de la Recherche (ANR)
- Commission Permanente de Cooperation Franco-Quebecoise (CPCFQ) through the Samuel de Champlain program
- Direction des Relations Internationales of the Universite de Montreal
- Region Midi-Pyrenees
This work examines the influence of substrate outgassing on the deposition dynamics of either hydrophilic or hydrophobic coatings on wood surfaces in organosilicon, dielectric barrier discharges. Sugar maple and black spruce wood samples were placed on the bottom electrode and the discharge was sustained in N-2-HMDSO (hexamethyldisiloxane) gas mixtures by applying a 24 kV peak-to-peak voltage at 2 kHz. Current-voltage characteristics revealed a transition from a filamentary to a homogeneous discharge with increasing plasma treatment time, t. Based on optical emission spectroscopy, the filamentary behavior was ascribed to the release of air and humidity from the wood substrate following discharge exposure which produced significant quenching of N-2 metastables. This effect vanished at longer treatment times due to the nearly complete pumping of products from the wood substrate and the progressive deposition of a barrier layer. Analysis of the surface wettability through static, water contact angles (WCAs) and of the surface composition through Fourier-Transform-Infra-Red-Spectroscopy and X-ray-Photoelectron-Spectroscopy indicated that for t < 10 min, the wood surface was more hydrophilic due to the formation of a SiOx layer, a typical behavior for HMDSO deposition in presence of oxygen. On the other hand, for t > 10 min, the static WCA increased up to similar to 140 degrees due to the deposition of hydrophobic Si(CH3)(3)-O-Si(CH3)(2), Si(CH3)(3), and Si(CH3)(2) functional groups. (C) 2013 Elsevier B.V. All rights reserved.
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