期刊
SURFACE & COATINGS TECHNOLOGY
卷 205, 期 21-22, 页码 5083-5087出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2011.05.011
关键词
ZnO nanorods; Al-doped ZnO; Pulsed laser deposition (PLD); Transmission electron microscopy; Scanning electron microscopy
资金
- Overseas Research Scholarship (ORS) scheme
- University of Bristol
Transmission and scanning electron microscopy are used to compare the growth of nanorod arrays in ZnO and Al-doped ZnO (2%Al) films grown by pulsed laser deposition. For a laser pulse energy of 10 mJ/pulse, nanorod arrays were formed at temperatures 575-625 degrees C for ZnO films and 650-675 degrees C for Al-doped ZnO films. For higher laser pulse energies, up to 30 mJ/pulse, nanorod growth in both cases moved to lower temperature regimes. By comparing nanorod growth temperature, morphology and density for ZnO and Al-doped ZnO growth, it is concluded that the differences in growth are due to lower surface diffusion rates in Al-doped films. The electrical resistivities of the Al doped ZnO films were in the range 5-7 x 10(-3) Omega.cm. (C) 2011 Elsevier B.V. All rights reserved.
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