期刊
SURFACE & COATINGS TECHNOLOGY
卷 205, 期 23-24, 页码 5269-5277出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2011.05.033
关键词
Transparent conductive oxide; Al-doped ZnO; Sputtering; Thin film
资金
- National Science Council of the Republic of China (Taiwan) [NSC 95-2221-E-005-111]
Al-doped ZnO (AZO) thin films were prepared on glass substrates by radio-frequency magnetron sputtering at deposition temperatures ranging from room temperature (RT) to 300 degrees C for transparent electrode applications. This study investigates the effects of H-2 plasma treatment on structural, electrical, and optical properties of AZO thin films. Plasma treatment was conducted at 300 degrees C using a plasma-enhanced chemical vapor deposition system for potential large size substrate applications. The crystal structure of plasma treated AZO films did not change considerably, but the surface roughness and surface grain size increased slightly. Improvement in electrical properties was strongly dependent on the deposition temperature. When the deposition temperature ranged from 300 degrees C to RT, the resistivity of plasma treated films decreased significantly by 22.7% to 97.6%, and the optical bandgap broadened by 0.011 to 0.076 eV. (C) 2011 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据